Liaoning, China
Business Type:
Manufacturer/Factory & Trading Company
Number of Employees:
Year of Establishment:
Management System Certification:
ISO 9001
Average Lead Time:
Peak season lead time: one month
Off season lead time: one month
OEM/ODM Service
Sample Available
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Pressure Chips, High Temperature Die, Silicon Diffusion Wafer manufacturer / supplier in China, offering Pressure Sensor Soi High Temperature Chips, Xmtai Series Intelligent Display Adjusting Instrument, Xmtai Series Intelligent Display Indicator and so on.

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Pressure Sensor Soi High Temperature Chips

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Min. Order: 800 Pieces
Port: Shenyang, China
Production Capacity: 100000 PCS/Month
Payment Terms: L/C, T/T
Type: Piezoresistive Pressure Sensor
Component: SemiConductor Type
For: Diffused Silicon Pressure Transmitter
Output Signal Type: Analog Type
Production Process: Normal Wirewound
Material: Stainless Steel

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Basic Info

Model NO.: HB2104
Thread Type: M
Wiring Type: Four-Wire
Measuring Medium: Gas
IP Rating: IP65
Certification: ISO
Customized: Customized
Working Temperature: -55 O C - +300 O C
Output: Analog Sensor
Usage: Pressure Sensitive Sensor
Theory: Silicon Diffusion
Trademark: HB
Transport Package: Anti-Static Bag
Specification: ISO9001
Origin: Shenyang, China
HS Code: 9026900000

Product Description

Electrical with SiO2, high consistency and economical wholesale price
Self-intellectual property and manufacture workmanship silicon Micromachining
4"Silicon wafer workmanship flow and controllable workmanship in batch production, various ranges
High accuracy\long stability and reliability
Suitable for mhigh temperature vapour, rubber, molten mass and blow monld

In 1961, Shenyang Academy of Instrumentation Science started to research and manufacture silicon piezoresistive wafers. With excellent technology and well educated employees, we become the market leader in China for piezoresistive die.

We establish our reputation for cost-effective and quality. The pressure dies have been employed in pressure transducers widely in the world.

Pressure Sensor Soi High Temperature Chips
Nominal Scale
Gauge pressureAbsolute Pressure
35KPa, 100KPa, 250KPa, 600KPa, 1MPa, 1.6MPa, 2.5MPa100KPa, 250KPa, 600KPa, 1MPa, 1.6MPa, 2.5MPa, 6MPa, 10MPa, 25MPa, 40MPa, 60MPa
02Offset≤ 20mV
03Span Output≥ 40mA(≤ 35KPa); ≥ 60mV (other scale)
04Nonlinearity± 0.25%F. S.
05Power Supply1 mADC (typical), 5VDC (optional)
06Zero Temperature Coefficient± 0.1%F. S. / º C
07Sensitivity Temperature Coefficient± 0.1%F. S. / º C
08Overload Capacity2 times scale(≤ 10MPa); 1.5times scale(> 10MPa)
09Bridge Resistance4 (1± 20%) KΩ
10Operating Temperature-55º C - +125º C(AI-electrode)
-55º C - +300º C(specific frame, gold electrode)
11Short Term Stability± 0.05%F. S. /8h
12Chip Size(um)3340*3340                2450*2450
1. Nonlinearity is calculated with the Least Squares Method.
2. Testing value are attached with the reference temperature 25º C.
3. Silicon wafer thickness c=400um, glass thickness d=800um

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